BSS192

BSS 192 SIPMOS ® Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSS 192 Type BSS 192 VDS -240 V ID -0.15 A RDS(on) 20 Ω Package SOT-89 Marking KB Ordering Code Q62702-S634 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.15 TA = 34 °C DC drain current, pulsed IDpuls -0.6 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 18/02/1997 BSS 192 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -240 -1.5 -0.1 -10 -10 10 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 -0.2 µA VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -100 nA Ω 20 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS...