BSS 296
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G ...
BSS 296
SIPMOS ® Small-Signal
Transistor N channel Enhancement mode Logic Level
VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 296 Type BSS 296
Pin 2 D Marking SS 296
Pin 3 S
VDS
100 V
ID
0.8 A
RDS(on)
0.8 Ω
Package TO-92
Ordering Code Q62702-S217
Tape and Reel Information E6296
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.8
TA = 25 °C
DC drain current, pulsed
IDpuls
3.2
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 296
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 1.4 0.1 8 10 0.5 0.6 2 1 50 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 0.8 1.4
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Sou...