BSS50

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial high gain amplification. handbook, halfpage 1 BSS50; BSS51; BSS52 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION NPN Darlington transistor in a TO-39 metal package. PNP complements: BSS61 and BSS62. 3 2 2 3 MAM311 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 IC Ptot hFE fT collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz VBE = 0 − − − − − − 2000 − − − − − − − − 200 45 60 80 1 0.8 5 − − MHz V V V A W W CONDITIONS open emitter − − − − − − 60 80 90 V V V MIN. TYP. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak coll...