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BSS52 Dataheets PDF



Part Number BSS52
Manufacturers NXP
Logo NXP
Description NPN Darlington transistors
Datasheet BSS52 DatasheetBSS52 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. handbook, halfpage 1 BSS50; BSS51; BSS52 PINNING PIN 1 2 3 emitter base collector, .

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DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. handbook, halfpage 1 BSS50; BSS51; BSS52 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION NPN Darlington transistor in a TO-39 metal package. PNP complements: BSS61 and BSS62. 3 2 2 3 MAM311 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 IC Ptot hFE fT collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz VBE = 0 − − − − − − 2000 − − − − − − − − 200 45 60 80 1 0.8 5 − − MHz V V V A W W CONDITIONS open emitter − − − − − − 60 80 90 V V V MIN. TYP. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open collector VBE = 0 PARAMETER collector-base voltage CONDITIONS open emitter BSS50; BSS51; BSS52 MIN. − − − − − − − − − − − − −65 − −65 MAX. 60 80 90 45 60 80 5 1 2 100 0.8 5 +150 200 +150 V V V V V V V A A UNIT mA W W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 220 35 UNIT K/W K/W 1997 Sep 03 3 Philips Semiconductors Product specification NPN Darlington transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES BSS50 BSS51 BSS52 IEBO hFE emitter cut-off current DC current gain PARAMETER collector cut-off current VBE = 0; VCE = 45 V VBE = 0; VCE = 60 V VBE = 0; VCE = 80 V IC = 0; VEB = 4 V VCE = 10 V IC = 150 mA IC = 500 mA VCEsat VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA CONDITIONS BSS50; BSS51; BSS52 MIN. − − − − TYP. MAX. UNIT − − − − 50 50 50 50 − − 1.3 1.3 1.6 2.3 1.6 1.6 1.9 2.2 2.2 1.65 1.75 − − − − − V V V V V V V V V V V MHz µs µs µs µs nA nA nA nA 1000 − 2000 − − − − − − − − − − 1.3 1.4 − − − − − − − − − − − − − − − − 200 IC = 500 mA; IB = 0.5 mA; Tj = 200 °C collector-emitter saturation voltage BSS51 VCEsat collector-emitter saturation voltage BSS50; BSS52 VBEsat VBEsat base-emitter saturation voltage base-emitter saturation voltage BSS51 BSS50; BSS52 VBEon fT ton base-emitter on-state voltage transition frequency IC = 1 A; IB = 1 mA IC = 1 A; IB = 4 mA IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA ICon = 1 A; IBon = 1 mA; IBoff = −1 mA toff turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA ICon = 1 A; IBon = 1 mA; IBoff = −1 mA Switching times (between 10% and 90% levels) turn-on time IC = 1 A; IB = 4 mA IC = 1 A; IB = 4 mA; Tj = 200 °C IC = 500 mA; IB = 0.5 mA IC = 1 A; IB = 1 mA IC = 1 A; IB = 1 mA; Tj = 200 °C 0.5 0.4 1.3 1.5 1997 Sep 03 4 Philips Semiconductors Product specification NPN Darlington transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BSS50; BSS51; BSS52 SOT5/11 j B α seating plane w M A M B M 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 Sep 03 5 Philips Semiconductors Product specification NPN Darlington transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BSS50; BSS51; BSS52 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended period.


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