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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSS50; BSS51; BSS52 NPN Darlington transistors
Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.
handbook, halfpage 1
BSS50; BSS51; BSS52
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION NPN Darlington transistor in a TO-39 metal package. PNP complements: BSS61 and BSS62.
3
2 2
3
MAM311
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 IC Ptot hFE fT collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz VBE = 0 − − − − − − 2000 − − − − − − − − 200 45 60 80 1 0.8 5 − − MHz V V V A W W CONDITIONS open emitter − − − − − − 60 80 90 V V V MIN. TYP. MAX. UNIT
1997 Sep 03
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Philips Semiconductors
Product specification
NPN Darlington transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSS50 BSS51 BSS52 VCES collector-emitter voltage BSS50 BSS51 BSS52 VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open collector VBE = 0 PARAMETER collector-base voltage CONDITIONS open emitter
BSS50; BSS51; BSS52
MIN. − − − − − − − − − − − − −65 − −65
MAX. 60 80 90 45 60 80 5 1 2 100 0.8 5 +150 200 +150 V V V V V V V A A
UNIT
mA W W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 220 35 UNIT K/W K/W
1997 Sep 03
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Philips Semiconductors
Product specification
NPN Darlington transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES BSS50 BSS51 BSS52 IEBO hFE emitter cut-off current DC current gain PARAMETER collector cut-off current VBE = 0; VCE = 45 V VBE = 0; VCE = 60 V VBE = 0; VCE = 80 V IC = 0; VEB = 4 V VCE = 10 V IC = 150 mA IC = 500 mA VCEsat VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA CONDITIONS
BSS50; BSS51; BSS52
MIN. − − − −
TYP. MAX. UNIT − − − − 50 50 50 50 − − 1.3 1.3 1.6 2.3 1.6 1.6 1.9 2.2 2.2 1.65 1.75 − − − − − V V V V V V V V V V V MHz µs µs µs µs nA nA nA nA
1000 − 2000 − − − − − − − − − − 1.3 1.4 − − − − − − − − − − − − − − − − 200
IC = 500 mA; IB = 0.5 mA; Tj = 200 °C collector-emitter saturation voltage BSS51 VCEsat collector-emitter saturation voltage BSS50; BSS52 VBEsat VBEsat base-emitter saturation voltage base-emitter saturation voltage BSS51 BSS50; BSS52 VBEon fT ton base-emitter on-state voltage transition frequency IC = 1 A; IB = 1 mA IC = 1 A; IB = 4 mA IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA ICon = 1 A; IBon = 1 mA; IBoff = −1 mA toff turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA ICon = 1 A; IBon = 1 mA; IBoff = −1 mA Switching times (between 10% and 90% levels) turn-on time IC = 1 A; IB = 4 mA IC = 1 A; IB = 4 mA; Tj = 200 °C IC = 500 mA; IB = 0.5 mA IC = 1 A; IB = 1 mA IC = 1 A; IB = 1 mA; Tj = 200 °C
0.5 0.4 1.3 1.5
1997 Sep 03
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Philips Semiconductors
Product specification
NPN Darlington transistors
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
BSS50; BSS51; BSS52
SOT5/11
j B
α
seating plane w M A M B M
1
b
k
2 3
D1
a A D A L
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45°
0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75
OUTLINE VERSION SOT5/11
REFERENCES IEC JEDEC TO-39 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-11
1997 Sep 03
5
Philips Semiconductors
Product specification
NPN Darlington transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BSS50; BSS51; BSS52
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended period.