BSS7728

Rev. 2.0 BSS7728N SIPMOS® Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Product Summary VDS RDS(on) ID 60 5 0.2 SOT-23 Drain pin 3 Gate pin1 Source pin 2 V Ω A Type Package Ordering Code Q67042-S4189 Tape and Reel Information E6327: 3000 pcs/reel Marking sSK BSS7728N SOT-23 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.2 0.16 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot T j , Tstg 0.8 6 ±20 0.36 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-06-06 Rev. 2.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA BSS7728N Symbol min. RthJA - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C µA 1 4.3 2.7 0.1 5 10 7.5 5 nA Ω Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.05A Drain-sou...