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PLASTIC RECTIFIER. FEP16HT-G Datasheet

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PLASTIC RECTIFIER. FEP16HT-G Datasheet






FEP16HT-G RECTIFIER. Datasheet pdf. Equivalent




FEP16HT-G RECTIFIER. Datasheet pdf. Equivalent





Part

FEP16HT-G

Description

ULTRAFAST PLASTIC RECTIFIER



Feature


SENSITRON SEMICONDUCTOR  FEP16AT-G-FE P16JT-G TECHNICAL DATA DATA SHEET 4842 ,REV.- Green Products FEP16AT-G-FEP16 JT-G ULTRAFAST PLASTIC RECTIFIER Mech anical Data • Case: JEDEC TO-220AB mo lded plastic body over passivated chips • Terminals: Plated leads solderable per MIL-STD-750, Method 2026 • Polar ity: As marked • Mounting Position: A ny • Mounting Torque: 5 in.
Manufacture

SENSITRON SEMICONDUCTOR

Datasheet
Download FEP16HT-G Datasheet


SENSITRON SEMICONDUCTOR FEP16HT-G

FEP16HT-G; . - lbs. max.        • W  e  ight:0.08 o u nce,2. 24 g ra m s                                    Fe a tures: • L ow forward voltage drop • High surge current capacity • High current capab ility • High reliability • Superfas t recovery times for high efficiency Dual rectifier construction, p.


SENSITRON SEMICONDUCTOR FEP16HT-G

ositive centertap Green Products in Comp liance with the RoHS Directive Case sty les      TO-220AB Mechani cal Dimensions: In Inches / mm  TO-22 0AB • 221 West Industry Court ! Deer .


SENSITRON SEMICONDUCTOR FEP16HT-G

.

Part

FEP16HT-G

Description

ULTRAFAST PLASTIC RECTIFIER



Feature


SENSITRON SEMICONDUCTOR  FEP16AT-G-FE P16JT-G TECHNICAL DATA DATA SHEET 4842 ,REV.- Green Products FEP16AT-G-FEP16 JT-G ULTRAFAST PLASTIC RECTIFIER Mech anical Data • Case: JEDEC TO-220AB mo lded plastic body over passivated chips • Terminals: Plated leads solderable per MIL-STD-750, Method 2026 • Polar ity: As marked • Mounting Position: A ny • Mounting Torque: 5 in.
Manufacture

SENSITRON SEMICONDUCTOR

Datasheet
Download FEP16HT-G Datasheet




 FEP16HT-G
SENSITRON
SEMICONDUCTOR
 FEP16AT-G-FEP16JT-G
TECHNICAL DATA
DATA SHEET 4842,REV.-
Green Products
FEP16AT-G-FEP16JT-G
ULTRAFAST PLASTIC RECTIFIER
Mechanical Data
Case: JEDEC TO-220AB molded plastic body over passivated chips
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
        W  e ight:0.08 o u nce,2.24 g ra m s                                   
Fe a tures:
Low forward voltage drop
High surge current capacity
High current capability
High reliability
Superfast recovery times for high efficiency
Dual rectifier construction, positive centertap
Green Products in Compliance with the RoHS Directive
Case styles




TO-220AB
Mechanical Dimensions: In Inches / mm

TO-220AB
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com




 FEP16HT-G
SENSITRON
SEMICONDUCTOR
Data Sheet 4842, Rev. -
 FEP16AT-G-FEP16JT-G
Green Products
Maximum Ratings and Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise noted.
Parameter
FEP FEP FEP FEP FEP FEP FEP FEP
Symbol 16AT-G 16BT-G 16CT-G 16DT-G 16FT-G 16GT-G 16HT-G 16JT-G Unit
Maximum repetitive peak reverse voltage
VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS voltage
VRMS 35 70 105 140 210 280 350 420 V
Maximum DC blocking voltage
VDC 50 100 150 200 300 400 500 600 V
Maximum average forward rectified current
at TC = 100°C
IF(AV)
16



P8 .e3amksfo srwinagrlde
surge current
halfsine wave
superimposed
IFSM
200
on rated load (JEDEC method)
A
A
Typical thermal reisistance (NOTE 3)
RΘJA
RΘJC
15.0
2.2
°C/W
Operating junction
and storage temperature range
TJ, TSTG
-55 to +150
°C/W
Electrical Characteristics
FEP FEP FEP FEP FEP FEP FEP FEP
  P arameter                            S ym bol 16AT-G 16BT-G 16CT-G 16DT-G 16FT-G 16GT-G 16HT-G 16JT-G
 Maximum instantaneous forward voltage
 per leg at 8.0 A
 Maximum DC reverse current at TC = 25°C
rated DC blocking voltage per leg TC = 100°C
VF
IR
0.95 1.3
10
500
1.5
Unit
V
µA
Maximum reverse recovery time per leg (NOTE 1)
trr
35
50 ns
Typical junction capacitance per leg (NOTE 2)
CJ
85.0

NOTES: (1) Reverse recovery test conditions: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
(3) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink
60 pF
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com




 FEP16HT-G
SENSITRON
SEMICONDUCTOR

FEP16AT - G -FEP16JT-G
Data Sheet 4842, Rev. -
20
Green Products
200
16 160
12 120
SINGLE PHASE
HALF WAVE
8 60HZ
80
RESISTIVE OR
INDUCTIVE LOAD
4 .375" (9.0mm) LEAD
40
                LENG THS                                                   

0
0 25 50 75 100 125 150 175
Ambient Temperature [ºC]
0
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
100 1000
FEP16AT-FEP16DT
10
100
FEP16FT -FEP16 JT
1
TA = 100ºC
10

0.1
 TA = 25ºC
Pulse Width = 300µs
 0.01
2% Duty Cycle
 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage, VF [V]
1
TA= 25ºC
0.1
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
100

90
80
70
60 FEP16AT-FEP16DT
50 FEP16FT-FEP16JT
50
NONINDUCTIVE
40
1
50
NONINDUCTIVE
2
5 10 20
50 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
+0.5A
trr
DUT
50V
(approx)
50
NONINDUCTIVE
(-)
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(+)
0
-0.25A
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com



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