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EGP10B

Fairchild Semiconductor

1.0 Ampere Glass Passivated High Efficiency Rectifiers

EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers EGP10A - EGP10K 1.0 Ampere Glass Passivated High...


Fairchild Semiconductor

EGP10B

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Description
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers Features Superfast recovery time for high efficiency Low forward voltage, high current capability Low leakage current High surge current capability July 2007 DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter IO Average Rectified Current .375 " lead length @ TL = 75°C Value 1.0 if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 PD Total Device Dissipation Derate above 25°C 2.5 17 IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range -65 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units A A W mW°C °C/W °C Electrical Characteristics* Ta = 25°C unless otherwise noted ...




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