BSS84DW

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-363 A D2 G1 S1 Dim A B B C Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 · · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KXX: Product marking code YY: Date code Marking Code: K84 Weight: 0.006 grams (approx.) K J D2 S2 Maximum Ratings Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS84DW -50 -50 ±20 -130 200 625 -55 to +150 Units V V V mA mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. 3. RGS £ 20KW. DS30204 Rev. C-2 1 of 2 KXX YY S2 G2 D1 Mechanical Data KXX YY C D F H J M 0.65 Nominal H K L M D G1 S1 F L All Dimensions in mm G2 D1 BSS84DW Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Trans...