BSS87

DISCRETE SEMICONDUCTORS DATA SHEET BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel vertical D-MOS transistor in a SOT89 envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high-speed transformer drivers etc. FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. Low RDS(on) PINNING - SOT89 1 2 3 = = = source drain gate QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 400 mA; VGS = 10 V Transfer admittance ID = 400 mA; VDS = 25 V | Yfs| typ. min. RDS(on) max. typ. VDS ±VGSO ID Ptot max. max. max. max. BSS87 200 V 20 V 280 mA 1 W 6 Ω 4.5 Ω 350 mS 140 mS PIN CONFIGURATION handbook, halfpage d g 1 Bottom view 2 3 MAM355 s marking: KA Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C Storage tem...