BSS89

BSS 89 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type BSS 89 Type BSS 89 BSS 89 BSS 89 Pin 2 D Marking SS89 Pin 3 S VDS 240 V ID 0.3 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.3 TA = 25 °C DC drain current, pulsed IDpuls 1.2 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 89 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 0.2 µA VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS 100 nA Ω 6 10 VG...