G1M Datasheet: GPP SUR FACE MOUNT RECTIFIER





G1M GPP SUR FACE MOUNT RECTIFIER Datasheet

Part Number G1M
Description GPP SUR FACE MOUNT RECTIFIER
Manufacture YS
Total Page 2 Pages
PDF Download Download G1M Datasheet PDF

Features: DATA SHEET SEMICONDUCTOR GPP SURFACE MOU NT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes G1A THRU G1M SMF Unit: inch ( mm ) 0.110(2.80) 0.095(2 .40) 0.056(1.43) 0.054(1.38) FEATURES • For surface mounted applications Low profile package • Built-in stra in relief • Easy pick and place • P lastic package has Underwriters Laborat ory Flammability Classification 94V-O u tilizing • Low Forward Drop • High temperature soldering : 260°C /10 seco nds at terminals 0.141(3.60) 0.126(3.2 0) 0.052(1.30) 0.043(1.10) 0.009(0.22 ) 0.006(0.15) 0.82MIN (1.27MIN) MECHA NICAL DATA Case: SMF molded plastic Ter minals: Solder plated, solderable per M IL-STD-750, Method 2026 Polarity: Indic ated by cathode band Standard packaging : 12mm tape (EIA-481) 0.050MIN (1.27MI N) 0.87MAX (2.20MAX) 0.201REF (5.1REF) 0.189(4.80) 0.173(4.40) 0.035(0.90)TY PICAL MAXIMUM RATINGS AND ELECTRICAL C HARACTERISTICS Ratings at 25°C ambien t temperature unless otherwise specified. Single phase, half wa.

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DATA SHEET
SEMICONDUCTOR
GPP SURFACE MOUNT RECTIFIER
VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes
G1A THRU G1M
SMF Unit: inch ( mm )
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing
Low Forward Drop
High temperature soldering : 260°C /10 seconds at terminals
0.141(3.60)
0.126(3.20)
0.052(1.30)
0.043(1.10)
MECHANICAL DATA
Case: SMF molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
0.050MIN
(1.27MIN)
0.87MAX
(2.20MAX)
0.201REF
(5.1REF)
0.189(4.80)
0.173(4.40)
0.035(0.90)TYPICAL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SY MBOLS G1A G1B G1D G1G G1J G1K G1M
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T L=75°C
VRRM
VRMS
VDC
I(AV)
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
1.0
V
V
V
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I FSM
30 A
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Curren
TA =25°C
at Rated DC Blocking Voltage
TA =125°C
Maximum Reverse Recovery Time(Note 1) TJ=25°C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance(Note 3)
Operating and Storage Temperature Range
VF
IR
TRR
CJ
Rө JA
TJ,TSTG
1.1
5.0
100
2.5
12
75
-55 to +150
V
µA
µA
µs
pF
°C/ W
°C
NOTES:
1. Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I rr =0.25A
2. Measured at 1 MHz and applied V r= 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
http://www.yeashin.com
1
REV.03 20150105

     






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