BSV52
BSV52
C
E
SOT-23
Mark: B2
B
NPN Switching Transistor
This device is designed for high speed saturated switchi...
BSV52
BSV52
C
E
SOT-23
Mark: B2
B
NPN Switching
Transistor
This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12 20 5.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
*BSV52 225 1.8 556
Units
mW mW/°C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSV52
NPN Switching
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = ...