BSX47

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS General industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 BSX45; BSX46; BSX47 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter voltage BSX45 BSX46 BSX47 ICM Ptot hFE peak collector current total power dissipation DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 fT transition frequency Tcase ≤ 25 °C IC = 100 mA; VCE = 1 V 63 100 IC = 50 mA; VCE = 10 V; f = 100 MHz 50 100 160 − 160 250 − MHz open base − − − − − − − − − − 40 60 80 1.5 6.25 V V V A W PARAMETER collector-base voltage CONDITIONS open emitter − − − − − − 80 100 120 V V V MIN. TYP. MAX. UNIT 1997 Apr 23 2 Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter voltage BSX45 BSX46 BSX47 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak ...