BSX59

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX59; BSX61 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 1 A) Low voltage (max. 45 V). APPLICATIONS High-speed switching in industrial applications. DESCRIPTION NPN switching transistor in a TO-39 metal package. 1 handbook, halfpage 2 BSX59; BSX61 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time BSX59 BSX61 Tamb ≤ 25 °C IC = 500 mA; VCE = 1 V IC = 50 mA; VCE = 10 V; f = 100 MHz ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − − 60 100 ns ns open emitter open base CONDITIONS − − − − 30 250 MIN. MAX. 70 45 1 800 − − MHz V V A mW UNIT 1997 May 22 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction ...