BSX62

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX62; BSX63 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 3 A) Low voltage (max. 60 V). APPLICATIONS Medium power switching. DESCRIPTION NPN switching transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BSX62; BSX63 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSX62 BSX63 VCEO collector-emitter voltage BSX62 BSX63 IC Ptot hFE collector current (DC) total power dissipation DC current gain BSX62-10; BSX63-10 BSX62-16; BSX63-16 fT toff transition frequency turn-off time IC = 200 mA; VCE = 10 V; f = 100 MHz ICon = 1 A; IBon = 50 mA; IBoff = −50 mA Tcase ≤ 25 °C IC = 1 A; VCE = 1 V 63 100 30 − 100 160 70 − 160 250 − 1.5 MHz µs open base − − − − − − − − 40 60 3 5 V V A W open emitter − − − − 60 80 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Jun 19 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSX62 BSX63 VCEO collector-emitter voltage BSX62 BSX63 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base curre...