4Q Triac. BT137-600E Datasheet

BT137-600E Triac. Datasheet pdf. Equivalent

Part BT137-600E
Description 4Q Triac
Feature Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passi.
Manufacture NXP
Datasheet
Download BT137-600E Datasheet

Philips Semiconductors Product specification Triacs sensit BT137-600E Datasheet
DIP Type Thyristor TRIACS Thyristor BT137-600E ■ Features BT137-600E Datasheet
TM BT137-600E HPM Sensitive Gate Triacs HAOPIN MICROELECT BT137-600E Datasheet
BT137 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220  BT137-600E Datasheet
BT137-600E 4Q Triac Rev.01 - 15 March 2018 Product data she BT137-600E Datasheet
BT137-600E Sensitive Gate Triacs Description Passivated, se BT137-600E Datasheet
isc Triacs INCHANGE Semiconductor BT137-600E FEATURES ·Wit BT137-600E Datasheet
Recommendation Recommendation Datasheet BT137-600E Datasheet




BT137-600E
BT137-600E
4Q Triac
12 June 2014
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended
for use in general purpose bidirectional switching and phase control applications. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 65 A
- - 8A
-
2.5 10
mA
- 4 10 mA
- 5 10 mA
Scan or click this QR code to view the latest information for this product



BT137-600E
NXP Semiconductors
Symbol
Parameter
IH holding current
Conditions
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
BT137-600E
4Q Triac
Min Typ Max Unit
- 11 25 mA
-
2.5 20
mA
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT137-600E
TO-220AB
BT137-600E/DG
TO-220AB
BT137-600E/L01
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
SOT78
7. Marking
Table 4. Marking codes
Type number
BT137-600E
BT137-600E/DG
BT137-600E/L01
Marking code
BT137-600E/DG
BT137-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)