FEATURES
Fast switching diode in MiniMELF case especially suited for automatic surface mounting
LL4148
Silicon Epitaxial Planar Switching Diode
LL-34
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL
Peak Reverse Voltage
VRM
Reverse Voltage
VR
Average Rectified Forward Current
IF(AV)
Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs
IFSM
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature Range
Tstg
1) Valid provided that electrodes are kept at ambient temperature.
Glass case MiniMELF Dimensions in mm
VALUE
100 75 200 0.5 1 4 500 1) 175 - 65 to + 175
UNIT
V V mA
A
mW
℃ ℃
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1
LL4148
Silicon Epitaxial Planar Switching Diode
Characteristics at Ta = 25℃
PARAMETER
SYMBOL
Forward Voltage at IF = 10 mA
Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150℃ Reverse Breakdown Voltage tested with 100 μA P.