Silicon Epitaxial Planar Diodes
Silicon Epitaxial Planar Diodes
LL4148.LL4448
Features
D Electrical data identical with the devices
1N4148 and 1N4448 ...
Description
Silicon Epitaxial Planar Diodes
LL4148.LL4448
Features
D Electrical data identical with the devices
1N4148 and 1N4448 respectively
Applications
Extreme fast switches
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range
Test Conditions tp=1ms VR=0
Type
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction ambient
Test Conditions on PC board 50mmx50mmx1.6mm
Symbol
VRRM VR IFSM IFRM IF IFAV PV Tj Tstg
Value 100 75 2 500 300 150 500 175 –65...+175
Unit V V A mA mA mA mW °C °C
Symbol RthJA
Value 500
Unit K/W
TELEFUNKEN Semiconductors Rev. A2, 24-Jun-96
1 (4)
LL4148.LL4448
Characteristics
Tj = 25_C
Parameter Forward voltage
Reverse current
Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time
Test Conditions
IF=5mA IF=50mA IF=...
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