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Philips Semiconductors
Product specification
Triacs sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
BT137S series E
BT137M series E QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 8 65 600E 600 8 65 800E 800 8 65 V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BT137S series E
BT137M series E
TYP. 75
MAX. 2.0 2.4 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.0 14 3.0 4.0 2.5 1.3 0.7 0.4 0.1 MAX. 10 10 10 25 25 35 25 35 20 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A;.