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BT137M-600F Dataheets PDF



Part Number BT137M-600F
Manufacturers NXP
Logo NXP
Description Triacs
Datasheet BT137M-600F DatasheetBT137M-600F Datasheet (PDF)

Philips Semiconductors Product specification Triacs BT137S series BT137M series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT137S (or BT137M)BT137S (or .

  BT137M-600F   BT137M-600F



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Philips Semiconductors Product specification Triacs BT137S series BT137M series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT137S (or BT137M)BT137S (or BT137M)BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65 VDRM IT(RMS) ITSM V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT137S series BT137M series THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 75 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137S-(or BT137M) VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137S-(or BT137M) VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs dVcom/dt - - 10 20 - V/µs tgt - - - 2 - µs October 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs BT137S series BT137M series 12 10 Ptot / W BT137 Tmb(max) / C 101 = 180 120 105 109 10 IT(RMS) / A BT137 1 90 60 30 8 102 C 8 6 4 2 0 6 113 4 117 121 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT137 BT137 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT137 1000 ITSM / A IT I TSM time 25 IT(RMS) / A 20 Tj initial = 25 C max 15 100 dI T /dt limit 10 T2- G+ quadrant 5 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 102˚C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 ITSM / A BT137 IT T ITSM time 1.6 1.4 1.2 1 0.8 BT136 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. October 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs BT137S series BT137M series 3 2.5 .


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