Document
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER BT137S (or BT137M)BT137S (or BT137M)BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65
VDRM IT(RMS) ITSM
V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 75 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137S-(or BT137M) VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT
IL
Latching current
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137S-(or BT137M) VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs
dVcom/dt
-
-
10
20
-
V/µs
tgt
-
-
-
2
-
µs
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
12 10
Ptot / W
BT137
Tmb(max) / C 101 = 180 120 105 109
10
IT(RMS) / A
BT137
1
90 60 30
8
102 C
8 6 4 2 0
6
113
4
117 121 125 10
2
0
2
4 6 IT(RMS) / A
8
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
BT137 BT137
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT137
1000
ITSM / A
IT
I TSM time
25
IT(RMS) / A
20
Tj initial = 25 C max
15
100 dI T /dt limit
10
T2- G+ quadrant
5
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 102˚C.
VGT(Tj) VGT(25 C)
80 70 60 50 40 30
ITSM / A
BT137 IT T ITSM time
1.6 1.4 1.2 1 0.8
BT136
Tj initial = 25 C max
20 10
0.6 0.4 -50
0
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
3 2.5 .