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BT137M-800E Dataheets PDF



Part Number BT137M-800E
Manufacturers NXP
Logo NXP
Description Triacs sensitive gate
Datasheet BT137M-800E DatasheetBT137M-800E Datasheet (PDF)

Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137S series E BT137M series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-.

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Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137S series E BT137M series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 8 65 600E 600 8 65 800E 800 8 65 V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT137S series E BT137M series E TYP. 75 MAX. 2.0 2.4 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.0 14 3.0 4.0 2.5 1.3 0.7 0.4 0.1 MAX. 10 10 10 25 25 35 25 35 20 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 50 2 MAX. UNIT V/µs µs October 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT137S series E BT137M series E 12 10 Ptot / W BT137 Tmb(max) / C 101 = 180 120 105 109 10 IT(RMS) / A BT137 1 90 60 30 8 102 C 8 6 4 2 0 6 113 4 117 121 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT137 BT137 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT137 1000 ITSM / A IT I TSM time 25 IT(RMS) / A 20 Tj initial = 25 C max 15 100 dI T /dt limit 10 T2- G+ quadrant 5 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 102˚C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 ITSM / A BT137 IT T ITSM time 1.6 1.4 1.2 1 0.8 BT136 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. October 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT137S series E BT137M series E 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT137E T2+ G+ T2+ GT2- GT2- G+ 25 IT / A Tj = 125 C Tj = 25 C BT137 20 typ Vo = 1.264 V Rs = 0.0378 Ohms max 15 10 1 0.5 0 -50 5 0 50 Tj / C 100 150 0 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximu.


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