TV050B027S4PT

New Product TV050B...S4PT Series Vishay General Semiconductor PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils) a ce db A (2) C (1) FEATURES Junction passivation optimized design passivated anisotropic rectifier technology 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package Unidirectional polarity only CIRCUIT DIAGRAM A (2) Notes (1) Front metallization side: Cathode (2) Back metallization side: Anode C (1) MECHANICAL DATA DIMENSIONS in inches (millimeters) TYPICAL TOTAL METAL THICKNESS DEVICE (1) ASSEMBLY CHIP SIZE SOLDERABLE CHIP THICKNESS FRONT SIDE C BACK SIDE A a, b min. max. c, d min. max. e METAL THICKNESS METAL THICKNESS min. max. TV050B...S4PT 0.048 0.050 0.039 0.041 0.011 0.013 Solderable (1.219) (1.270) (0.991) (1.041) (0.279) (0.330) Ni/Au 0.75 μm Ni/Au 0.75 μm Note (1) Refer to Device Code definition ELECTRICAL CHARACTERISTICS (TA = 25 °C unless o...