VN13A

o §upertexinc. VN13A N-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVDSS I BVOGS 40V 60V 100V RDS(ON) (max) an an an IO(ON) (min) O.5A O.5A O.5A Order Number I Package TO-39 TO-92 VN1304N2 VN1306N2 VN1304N3 VN1306N3 VN1310N2 VN1310N3 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and...