VP01A

" !iupertexinc. VP01A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoos -40V -60V -90V ROS(ON) (max) 8n 8n 8n jOlON) (min) -O.SA -O.SA -O.SA TO-39 TO-52 VP0104N2 VP0104N9 VP0106N2 VP0106N9 VP0109N2 VP0109N9 Order Number I Package TO-92 TO-220 Quad P-DIP Quad C-DIP DICE VP0104N3 VP0104NS VP0104N6 VP0104N7 VP0104ND VP0106N3 VP0106NS VP0106N6 VP0106N7 VP0106ND VP0109N3 VP0109NS - - VP0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and wit...