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M29W320DT Datasheet, Equivalent, Flash memory.32-Mbit 3V Supply Flash memory 32-Mbit 3V Supply Flash memory |
| Part | M29W320DT |
|---|---|
| Description | 32-Mbit 3V Supply Flash memory |
| Feature | M29W320DT M29W320DB 32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 80, and 90 ns Programming time – 10µs per Byte/Word typical 67 memory blocks – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 64 Main Blocks Program/Erase controller – Embedded Byte/Word Program algorithms Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend Unlock Bypass Program command – Faste. |
| Manufacture | Numonyx |
| Datasheet |
| Part | M29W320DT |
|---|---|
| Description | 32-Mbit 3V Supply Flash memory |
| Feature | M29W320DT M29W320DB 32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 80, and 90 ns Programming time – 10µs per Byte/Word typical 67 memory blocks – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 64 Main Blocks Program/Erase controller – Embedded Byte/Word Program algorithms Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend Unlock Bypass Program command – Faste. |
| Manufacture | Numonyx |
| Datasheet |
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