8-Mbit Boot Block 3 V Supply Flash memory
M29W800FT M29W400FT M29W800FB M29W400FB
8-Mbit (1 Mbit×8 / 512 Kbit×16); 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 ...
Description
M29W800FT M29W400FT M29W800FB M29W400FB
8-Mbit (1 Mbit×8 / 512 Kbit×16); 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read
Access time: 55 ns, 70 ns Programming time
– 10 µs per byte/word typical 19 memory blocks (M29W800F)
– 1 boot block (top or bottom location) – 3 parameter blocks – 15 main blocks 11 memory blocks (M29W400F) – 1 boot block (top or bottom location) – 3 parameter blocks – 7 main blocks Program/erase controller – Embedded byte/word program algorithms Erase suspend and resume modes – Read and program another block during
erase suspend Unlock bypass program command
– Faster production/batch programming Temporary block unprotection mode Common Flash interface
– 64-bit security code Low power consumption
– Standby and automatic standby 100,000 program/erase cycles per block Electronic signature
– Manufacturer...
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