DatasheetsPDF.com

BT139-500E Dataheets PDF



Part Number BT139-500E
Manufacturers NXP
Logo NXP
Description Triacs
Datasheet BT139-500E DatasheetBT139-500E Datasheet (PDF)

Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT139 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT139Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 50.

  BT139-500E   BT139-500E


Document
Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT139 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT139Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 16 140 600E 600 16 140 800E 800 16 140 V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 16 140 150 98 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT139 series E TYP. 60 MAX. 1.2 1.7 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.2 0.7 0.4 0.1 MAX. 10 10 10 25 30 40 30 40 30 1.6 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 50 2 MAX. UNIT V/µs µs September 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT139 series E 25 Ptot / W BT139 Tmb(max) / C = 180 95 20 IT(RMS) / A BT139 20 1 120 90 101 99 C 15 15 60 30 107 10 113 10 5 5 119 0 0 5 10 IT(RMS) / A 15 125 20 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT139 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT139 1000 ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time 20 10 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A BT139 IT T 100 ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C. VGT(Tj) VGT(25 C) 150 1.6 1.4 1.2 1 BT136 Tj initial = 25 C max 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. September 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT139 series E 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT139E T2+ G+ T2+ GT2- GT2- G+ 50 IT / A Tj = 125 C Tj = 25 C BT139 40 typ Vo = 1.195 V Rs = 0.018 Ohms max 30 20 1 0.5 0 -50 10 0 50 Tj / C 100 150 0 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 TRIAC 10 Zth j-mb (K/W) BT139 1 unidirectional bidirectional 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1.


BT139-500 BT139-500E BT139-500F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)