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LM6863DL Datasheet, Equivalent, Switching Transistor.NPN Low Voltage Switching Transistor NPN Low Voltage Switching Transistor |
| Part | LM6863DL |
|---|---|
| Description | NPN Low Voltage Switching Transistor |
| Feature |
LM6863DL
NPN/NPN Low Voltage Switching Transistor
•：■■■■ROHS •FEATURES:■LOW VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT •■■ •APPLICATION:■FLUORESCENT LAMP ■ELECTRONIC BALLAST ECT. •（TC=25℃） •Absolute Maximum Ratings (Tc=25℃) PARAMETER - Collector-Base Voltage - Collector-Emitter Voltage - Emitter-Base Voltage SYMBOL VCBO VCEO VEBO VALUE 400 210 9 UNIT V V V Collector Current Ic 3 A Total Power Dissipation Junction Temperature PC 25 W Tj 150 ℃ Storage Temperature TsTg -55-150 ℃ ：TO-126 BCE （TC=25℃） Electrical Charact. |
| Manufacture | Mai Li Electronics |
| Datasheet |
| Part | LM6863DL |
|---|---|
| Description | NPN Low Voltage Switching Transistor |
| Feature |
LM6863DL
NPN/NPN Low Voltage Switching Transistor
•：■■■■ROHS •FEATURES:■LOW VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT •■■ •APPLICATION:■FLUORESCENT LAMP ■ELECTRONIC BALLAST ECT. •（TC=25℃） •Absolute Maximum Ratings (Tc=25℃) PARAMETER - Collector-Base Voltage - Collector-Emitter Voltage - Emitter-Base Voltage SYMBOL VCBO VCEO VEBO VALUE 400 210 9 UNIT V V V Collector Current Ic 3 A Total Power Dissipation Junction Temperature PC 25 W Tj 150 ℃ Storage Temperature TsTg -55-150 ℃ ：TO-126 BCE （TC=25℃） Electrical Charact. |
| Manufacture | Mai Li Electronics |
| Datasheet |
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