B648A

2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg Ratings 2SB648 –180 –120 –5 –50 –100 1 150 –55 to +150 2SB648A –180 –160 –5 –50 –100 1 150 –55 to +150 Unit V V V mA mA W °C °C Free Datasheet http://www.nDatasheet.com 2SB648, 2SB648A Electrical Characteristics (Ta = 25°C) 2SB648 2SB648A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –180 — — –180 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –120 — — –160 — — V IC = –1 mA,...