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BT139X Dataheets PDF



Part Number BT139X
Manufacturers NXP
Logo NXP
Description Triacs
Datasheet BT139X DatasheetBT139X Datasheet (PDF)

Philips Semiconductors Product specification Triacs BT139X series GENERAL DESCRIPTION Glass passivated triacs in a full pack, plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT139XBT139XBT139XRepetitive peak off-state voltages RMS on-sta.

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Philips Semiconductors Product specification Triacs BT139X series GENERAL DESCRIPTION Glass passivated triacs in a full pack, plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT139XBT139XBT139XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 16 140 600 600F 600G 600 16 140 800 800F 800G 800 16 140 VDRM IT(RMS) ITSM V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 16 140 150 98 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT139X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT139XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 10 22 7 20 8 10 6 1.2 0.7 0.4 0.1 35 35 35 70 40 60 40 60 30 MAX. ...F 25 25 25 70 40 60 40 60 30 1.6 1.5 0.5 ...G 50 50 50 100 60 90 60 90 60 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current September 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs BT139X series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT139XVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A; dIcom/dt = 7.2 A/ms; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs dVcom/dt - - 10 20 - V/µs tgt - - - 2 - µs September 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs BT139X series 25 Ptot / W BT139 Ths(max) / C = 180 25 20 IT(RMS) / A BT139X 20 1 120 90 45 38 C 15 15 60 30 65 10 85 10 5 105 5 0 0 5 10 IT(RMS) / A 15 125 20 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT139 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BT139 1000 ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time 20 10 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A BT139 IT T 100 ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 38˚C. VGT(Tj) VGT(25 C) 150 1.6 1.4 1.2 1 BT136 Tj initial = 25 C max 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissib.


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