Triacs. BT139X-800E Datasheet

BT139X-800E Triacs. Datasheet pdf. Equivalent

Part BT139X-800E
Description Triacs
Feature Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passi.
Manufacture NXP
Datasheet
Download BT139X-800E Datasheet

Philips Semiconductors Product specification Triacs sensit BT139X-800E Datasheet
Recommendation Recommendation Datasheet BT139X-800E Datasheet




BT139X-800E
Philips Semiconductors
Triacs
sensitive gate
Product specification
BT139X series E
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a full pack plastic envelope,
intended for use in general purpose
bidirectional switching and phase
control applications, where high
sensitivity is required in all four
quadrants.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT139X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500E
500
16
140
600E
600
16
140
800E
800
16
140
V
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Ths 38 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200



BT139X-800E
Philips Semiconductors
Triacs
sensitive gate
Product specification
BT139X series E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
- - 4.0 K/W
- - 5.5 K/W
- 55 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP. MAX. UNIT
- 2.5 10 mA
- 4.0 10 mA
- 5.0 10 mA
- 11 25 mA
- 3.2 30 mA
- 16 40 mA
- 4.0 30 mA
- 5.5 40 mA
- 4.0 30 mA
- 1.2 1.6 V
- 0.7 1.5 V
0.25 0.4
-
V
- 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN.
-
-
TYP. MAX. UNIT
50 - V/µs
2 - µs
September 1997
2
Rev 1.200





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