GT28F128W18

1.8 Volt Intel® Wireless Flash Memory (W18) 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features s Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit m— 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed o— 4-Word, 8-Word, and Continuous-Word Burst Modes .c— Burst and Page Modes in Parameter and Main Partitions — Programmable WAIT Configuration — Enhanced Factory Programming Mode@ U3.50 µs/Word (Typ) — Glueless 12 V interface for Fast Factory t4Programming @ 8 µs/Word (Typ) — 1.8 V Low-Power Programming @ 12 µs/Word (Typ) e— Program or Erase during Reads s Architecture e— Multiple 4-Mbit Partitions — Dual-Operation: Read-While-Write or Read- hWhile-Erase — Eight, 4-Kword Parameter Code and Data Blocks S— 32-Kword Main Code and Data Blocks — Top and Bottom Parameter Configurations tas Power Operation — 1.7 V to 1.95 V Read and Write Operations — 1.7 V to 2.24 V VCCQ for I/O Isolation a— ...