| Feature |
Intel® Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst and Page Mode in All Blocks and across All Partition Boundaries — Burst Suspend Feature — Enhanced Factory Programming: 3.5 µs per Word Program Time — Programmable WAIT Signal Polarity
■ Flash Power — VCC = 1.70 V – 1.90 V — VCCQ = 2.20 V – 3.30 V — Standby Current (0.13 µm) = 8 µA (typ.) — Read Current = 7 mA (4 word burst, typ.)
■ Flas. |
