Thyristors logic level
Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
SYMBOL VD...
Description
Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER
BT148S-600Z
BT148M-600Z
Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices feature a gate-cathode reverse breakdown voltage specification. They can be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
MAX. 600Z 600 2.5 4 35
UNIT V A A A
BT148S (or BT148M)Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode
PIN CONFIGURATION
tab
SYMBOL
a
k
2 1 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM PGM PG(AV) Tstg Tj PARAMETER Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state ITM = 10 A; IG = 50 mA; current after triggering dIG/dt = 50 mA/µs Peak gate current Peak gate power Average gate power over any 20 ms perio...
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