BT148M-600Z

Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT148S-600Z BT148M-600Z Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices feature a gate-cathode reverse breakdown voltage specification. They can be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. MAX. 600Z 600 2.5 4 35 UNIT V A A A BT148S (or BT148M)Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode PIN CONFIGURATION tab SYMBOL a k 2 1 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM PGM PG(AV) Tstg Tj PARAMETER Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state ITM = 10 A; IG = 50 mA; current after triggering dIG/dt = 50 mA/µs Peak gate current Peak gate power Average gate power over any 20 ms perio...