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N28F001BX Datasheet, Equivalent, FLASH MEMORY.

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

 

 

 

Part N28F001BX
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
Feature 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMOR Y 28F001BX-T 28F001BX-B 28F001BN-T 28F0 01BN-B Y High-Integration Blocked Arch itecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB M ain Block Y 100 000 Erase Program Cycle s Per Block Y Simplified Program and Er ase Automated Algorithms via On-Chip Wr ite State Machine (WSM) Y SRAM-Compatib le Write Interface Y Deep Power-Down Mo de 0 05 mA ICC Typical 0 8 mA IPP Typic al Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maxim um Access Time 5 0V g10% VCC Y Hardware Data Protection Feature Erase Write Lo ckout during P .
Manufacture Intel
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Part N28F001BX
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
Feature 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMOR Y 28F001BX-T 28F001BX-B 28F001BN-T 28F0 01BN-B Y High-Integration Blocked Arch itecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB M ain Block Y 100 000 Erase Program Cycle s Per Block Y Simplified Program and Er ase Automated Algorithms via On-Chip Wr ite State Machine (WSM) Y SRAM-Compatib le Write Interface Y Deep Power-Down Mo de 0 05 mA ICC Typical 0 8 mA IPP Typic al Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maxim um Access Time 5 0V g10% VCC Y Hardware Data Protection Feature Erase Write Lo ckout during P .
Manufacture Intel
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