TN28F001BX

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y 100 000 Erase Program Cycles Per Block Y Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) Y SRAM-Compatible Write Interface Y Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maximum Access Time 5 0V g10% VCC Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions Y Advanced Packaging JEDEC Pinouts 32-Pin PDIP 32-Lead PLCC TSOP Y ETOXTM II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y Extended Temperature Options Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase These devices aid the sy...