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PC28F512M29EW Datasheet, Equivalent, Embedded Memory.

Parallel NOR Flash Embedded Memory

Parallel NOR Flash Embedded Memory

 

 

 

Part PC28F512M29EW
Description Parallel NOR Flash Embedded Memory
Feature 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Para llel NOR Flash Features Parallel NOR Fl ash Embedded Memory JS28F256M29EWxx, PC 28F256M29EWxx, RC28F256M29EWxx JS28F512 M29EWxx, PC28F512M29EWxx, RC28F512M29EW xx JS28F00AM29EWxx, PC28F00AM29EWxx, RC 28F00AM29EWxx PC28F00BM29EWxx, RC28F00B M29EWxx Features
• 2Gb = stacked dev ice (two 1Gb die)
• Supply voltage VCC = 2.
7–3.
6V (program, erase, rea d) – VCCQ = 1.
65–VCC (I/O buffers)
• Asynchronous random/page read – P age size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP)
• Buffe r program: 512-word program buffer
• .
Manufacture MICRON
Datasheet
Download PC28F512M29EW Datasheet
Part PC28F512M29EW
Description Parallel NOR Flash Embedded Memory
Feature 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Para llel NOR Flash Features Parallel NOR Fl ash Embedded Memory JS28F256M29EWxx, PC 28F256M29EWxx, RC28F256M29EWxx JS28F512 M29EWxx, PC28F512M29EWxx, RC28F512M29EW xx JS28F00AM29EWxx, PC28F00AM29EWxx, RC 28F00AM29EWxx PC28F00BM29EWxx, RC28F00B M29EWxx Features
• 2Gb = stacked dev ice (two 1Gb die)
• Supply voltage VCC = 2.
7–3.
6V (program, erase, rea d) – VCCQ = 1.
65–VCC (I/O buffers)
• Asynchronous random/page read – P age size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP)
• Buffe r program: 512-word program buffer
• .
Manufacture MICRON
Datasheet
Download PC28F512M29EW Datasheet

PC28F512M29EW

PC28F512M29EW
PC28F512M29EW

PC28F512M29EW

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