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BT150S-600R

NXP

SCR

DPAK BT150S-600R SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gat...


NXP

BT150S-600R

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Description
DPAK BT150S-600R SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT428 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications General purpose switching Protection Circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage [1] VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 600 V - - 35 A - - 4A - 15 200 µA [1] Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. Scan or click this QR code to view the latest information for this product NXP Semiconductors BT150S-600R SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K catho...




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