BT151 Thyristors Datasheet

BT151 Datasheet, PDF, Equivalent


Part Number

BT151

Description

Thyristors

Manufacture

NXP

Total Page 12 Pages
Datasheet
Download BT151 Datasheet


BT151
BT151 series L and R
Thyristors
Rev. 04 — 23 October 2006
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT78 plastic package.
1.2 Features
I High thermal cycling performance
I High bidirectional blocking voltage
1.3 Applications
I Motor control
I Ignition circuits
I Static switching
I Protection circuits
1.4 Quick reference data
I VDRM 500 V (BT151-500L/R)
I VRRM 500 V (BT151-500L/R)
I VDRM 650 V (BT151-650L/R)
I VRRM 650 V (BT151-650L/R)
I VDRM 800 V (BT151-800R)
I VRRM 800 V (BT151-800R)
I ITSM 120 A (t = 10 ms)
I IT(RMS) 12 A
I IT(AV) 7.5 A
I IGT 5 mA (BT151 series L)
I IGT 15 mA (BT151 series R)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
cathode (K)
anode (A)
gate (G)
mounting base; connected to anode
Simplified outline
mb
Symbol
AK
G
sym037
123
SOT78 (3-lead TO-220AB)

BT151
NXP Semiconductors
BT151 series L and R
Thyristors
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BT151-500L
BT151-500R
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
BT151-650L
BT151-650R
BT151-800R
4. Limiting values
Version
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R
VRRM
repetitive peak reverse voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R
IT(AV)
average on-state current
half sine wave; Tmb 109 °C;
see Figure 1
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4
and 5
ITSM
non-repetitive peak on-state
half sine wave; Tj = 25 °C prior to
current
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
I2t I2t for fusing
t = 10 ms
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
over any 20 ms period
Min
[1] -
[1] -
-
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
40
-
Max
500
650
800
500
650
800
7.5
12
120
132
72
50
2
5
5
0.5
+150
125
Unit
V
V
V
V
V
V
A
A
A
A
A2s
A/µs
A
V
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
BT151_SER_L_R_4
Product data sheet
Rev. 04 — 23 October 2006
© NXP B.V. 2006. All rights reserved.
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Features BT151 series L and R Thyristors Rev. 04 — 23 October 2006 Product data sheet 1. Product profile 1.1 General desc ription Passivated thyristors in a SOT7 8 plastic package. 1.2 Features I High thermal cycling performance I High bi directional blocking voltage 1.3 Appli cations I Motor control I Ignition circ uits I Static switching I Protection c ircuits 1.4 Quick reference data I VDR M ≤ 500 V (BT151-500L/R) I VRRM ≤ 5 00 V (BT151-500L/R) I VDRM ≤ 650 V (B T151-650L/R) I VRRM ≤ 650 V (BT151-65 0L/R) I VDRM ≤ 800 V (BT151-800R) I V RRM ≤ 800 V (BT151-800R) I ITSM ≤ 120 A (t = 10 ms) I IT(RMS) ≤ 12 A I IT(AV) ≤ 7.5 A I IGT ≤ 5 mA (BT151 series L) I IGT ≤ 15 mA (BT151 series R) 2. Pinning information Table 1. P in 1 2 3 mb Pinning Description cathod e (K) anode (A) gate (G) mounting base; connected to anode Simplified outlin e mb Symbol AK G sym037 123 SOT78 (3- lead TO-220AB) NXP Semiconductors BT1 51 series L and R Thyristors 3. Ordering information Table 2. Ordering information Type .
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