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STM6726 Datasheet, Equivalent, Effect Transistor.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

 

 

 

Part STM6726
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STM6726Green Product SamHop Microelectr onics Corp.
N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1.
0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 18 @ VGS=10V 60V 8.
4A 25 @ VGS=4.
5V FEATURES Super high dense ce ll design for low RDS(ON).
Rugged and r eliable.
Suface Mount Package.
S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C u nless otherwise noted) Symbol Paramete r VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Drain Current-Continu ous c IDM -Pulsed a c TC=25°C TC=70° C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG .
Manufacture SamHop Microelectronics
Datasheet
Download STM6726 Datasheet
Part STM6726
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STM6726Green Product SamHop Microelectr onics Corp.
N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1.
0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 18 @ VGS=10V 60V 8.
4A 25 @ VGS=4.
5V FEATURES Super high dense ce ll design for low RDS(ON).
Rugged and r eliable.
Suface Mount Package.
S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C u nless otherwise noted) Symbol Paramete r VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Drain Current-Continu ous c IDM -Pulsed a c TC=25°C TC=70° C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG .
Manufacture SamHop Microelectronics
Datasheet
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STM6726

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