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SP823C Datasheet, Equivalent, Effect Transistor.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

 

 

 

Part SP823C
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature SP823CGreen Product Sa mHop Microelectr onics C orp.
N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1.
0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 80V 80A 5.
5 @ VGS=10V FE ATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Sufa ce Mount Package.
DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Symbol Par ameter VDS Drain-Source Voltage VGS G ate-Source Voltage ID Drain Current-C ontinuous c TC=25°C TC=70°C IDM -Pu lsed a c EAS Single Pulse Avalanche En ergy d PD Maximum Power Dissipation TC=25°C TC=70°C T .
Manufacture SamHop Microelectronics
Datasheet
Download SP823C Datasheet
Part SP823C
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature SP823CGreen Product Sa mHop Microelectr onics C orp.
N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1.
0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 80V 80A 5.
5 @ VGS=10V FE ATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Sufa ce Mount Package.
DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Symbol Par ameter VDS Drain-Source Voltage VGS G ate-Source Voltage ID Drain Current-C ontinuous c TC=25°C TC=70°C IDM -Pu lsed a c EAS Single Pulse Avalanche En ergy d PD Maximum Power Dissipation TC=25°C TC=70°C T .
Manufacture SamHop Microelectronics
Datasheet
Download SP823C Datasheet

SP823C

SP823C
SP823C

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