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SP6719 Datasheet, Equivalent, Effect Transistor.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

 

 

 

Part SP6719
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature SP6719Green Product Sa mHop Microelectr onics C orp.
N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1.
0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 12.
5 @ VGS=10V 60V 11A 19 .
0 @ VGS=4.
5V FEATURES Super high dens e cell design for low RDS(ON).
Rugged a nd reliable.
Suface Mount Package.
DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIM UM RATINGS (TA=25°C unless otherwise n oted) Symbol Parameter VDS Drain-Sour ce Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single P ulse Avalanche Energy d PD Maximum Po wer Dissipation T .
Manufacture SamHop Microelectronics
Datasheet
Download SP6719 Datasheet
Part SP6719
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature SP6719Green Product Sa mHop Microelectr onics C orp.
N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1.
0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 12.
5 @ VGS=10V 60V 11A 19 .
0 @ VGS=4.
5V FEATURES Super high dens e cell design for low RDS(ON).
Rugged a nd reliable.
Suface Mount Package.
DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIM UM RATINGS (TA=25°C unless otherwise n oted) Symbol Parameter VDS Drain-Sour ce Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single P ulse Avalanche Energy d PD Maximum Po wer Dissipation T .
Manufacture SamHop Microelectronics
Datasheet
Download SP6719 Datasheet

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