BT151-500R Thyristors Datasheet

BT151-500R Datasheet, PDF, Equivalent


Part Number

BT151-500R

Description

Thyristors

Manufacture

NXP

Total Page 11 Pages
Datasheet
Download BT151-500R Datasheet


BT151-500R
BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
Rev. 05 — 2 March 2009
Product data sheet
1. Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.2 Features and benefits
„ High reliability
„ High surge current capability
„ High thermal cycling performance
1.3 Applications
„ Ignition circuits
„ Motor control
„ Protection Circuits
„ Static switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDRM
repetitive peak
off-state voltage
IT(AV)
average on-state
current
IT(RMS) RMS on-state
current
Static characteristics
IGT gate trigger current
Conditions
half sine wave;
Tmb 109 °C; see Figure 3
half sine wave;
Tmb 109 °C; see Figure 1;
see Figure 2
VD = 12 V; Tj = 25 °C;
IT = 100 mA; see Figure 8
Min Typ Max Unit
- - 500 V
- - 7.5 A
- - 12 A
- 2 15 mA

BT151-500R
NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1K
cathode
2A
anode
3G
gate
mb mb
anode
BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
Simplified outline
mb
Graphic symbol
AK
G
sym037
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
BT151-500R
TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
SC-46
TO-220AB
Version
SOT78
BT151-500R_5
Product data sheet
Rev. 05 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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Features BT151-500R SCR, 12 A, 15mA, 500 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Sil icon Controlled Rectifier) in a SOT78 p lastic package. 1.2 Features and benef its „ High reliability „ High surge c urrent capability „ High thermal cycl ing performance 1.3 Applications „ Ig nition circuits „ Motor control „ Pr otection Circuits „ Static switching 1.4 Quick reference data Table 1. Quic k reference Symbol Parameter VDRM re petitive peak off-state voltage IT(AV) average on-state current IT(RMS) RMS on-state current Static characteristi cs IGT gate trigger current Conditions half sine wave; Tmb ≤ 109 °C; see F igure 3 half sine wave; Tmb ≤ 109 °C ; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 Min Typ Max Unit - - 500 V - - 7.5 A - - 12 A - 2 15 mA NXP Semiconductors 2. Pinning information Table 2. Pinni ng information Pin Symbol Description 1K cathode 2A anode 3G gate mb mb.
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