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SP470C Datasheet, Equivalent, Effect Transistor.N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Part | SP470C |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP470CGreen
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 40V 130A 2. 3 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. S uface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc =25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VG S Gate-Source Voltage ID Drain Curren t-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipatio n TC=25°C TC=70°C . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
| Part | SP470C |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP470CGreen
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 40V 130A 2. 3 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. S uface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc =25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VG S Gate-Source Voltage ID Drain Curren t-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipatio n TC=25°C TC=70°C . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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