STF1016CGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PROD...
STF1016CGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
17 @ VGS=10V
100V
40A
19 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
DFN 3.3 X 3.3 PIN 1
G S S S
(Bottom view)
DD D D
D5 D6 D7 D8
4G 3S 2S 1S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol VDS VGS
Parameter Drain-Source Voltage d
Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TC=25°C
TC=100°C TA=25°C
EAS Single Pulse Avalanche Energy e
PD
Maximum Power Dissipation
TC=25°C TA=25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA R JC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
Limit 100 ±20 40 25.3
8 160 196 62.5 1.92
-55 to 150
65 2
Units V V A A A A mJ W W
°C
°C/W °C/W
Details are subject to change without notice.
1
J...