BT152-600R Thyristors Datasheet

BT152-600R Datasheet, PDF, Equivalent


Part Number

BT152-600R

Description

Thyristors

Manufacture

NXP

Total Page 6 Pages
Datasheet
Download BT152-600R Datasheet


BT152-600R
Philips Semiconductors
Thyristors
Product specification
BT152 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT152-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
400R 600R 800R
450 650 800
13 13 13
20 20 20
200 200 200
V
A
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
Average on-state current half sine wave; Tmb 103 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-400R -600R -800R
4501 6501 800
13
20
200
220
200
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.200

BT152-600R
Philips Semiconductors
Thyristors
Product specification
BT152 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
MIN. TYP. MAX. UNIT
- - 1.1 K/W
- 60 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 40 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
3
25
15
1.4
0.6
0.4
0.2
MAX.
32
80
60
1.75
1.5
-
1.0
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform gate open circuit
VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs;
ITM = 40 A
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100
MIN.
200
-
-
TYP. MAX. UNIT
300 - V/µs
2 - µs
70 - µs
March 1997
2
Rev 1.200


Features Philips Semiconductors Product specific ation Thyristors BT152 series GENERA L DESCRIPTION Glass passivated thyristo rs in a plastic envelope, intended for use in applications requiring high bidi rectional blocking voltage capability a nd high thermal cycling performance. Ty pical applications include motor contro l, industrial and domestic lighting, he ating and static switching. QUICK REFE RENCE DATA SYMBOL VDRM, VRRM IT(AV) IT( RMS) ITSM PARAMETER BT152Repetitive pea k off-state voltages Average on-state c urrent RMS on-state current Non-repetit ive peak on-state current MAX. MAX. MAX . UNIT 400R 450 13 20 200 600R 650 13 2 0 200 800R 800 13 20 200 V A A A PINNI NG - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURA TION tab SYMBOL a k 1 23 g LIMITI NG VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(AV) IT(RMS) ITSM P ARAMETER Repetitive peak off-state volt ages Average on-state current RMS on-state current Non-repetiti.
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