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BT152X-800R Dataheets PDF



Part Number BT152X-800R
Manufacturers NXP
Logo NXP
Description Thyristors
Datasheet BT152X-800R DatasheetBT152X-800R Datasheet (PDF)

Philips Semiconductors Product specification Thyristors BT152X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT152XRepetitive peak off-state voltag.

  BT152X-800R   BT152X-800R



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Philips Semiconductors Product specification Thyristors BT152X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT152XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 400R 450 13 20 200 600R 650 13 20 200 800R 800 13 20 200 V A A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Ths ≤ 43 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -40 MAX. -400R -600R -800R 4501 6501 800 13 20 200 220 200 200 5 5 5 20 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors BT152X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 40 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN..


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