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BT258X-600R Dataheets PDF



Part Number BT258X-600R
Manufacturers NXP
Logo NXP
Description Thyristors logic level
Datasheet BT258X-600R DatasheetBT258X-600R Datasheet (PDF)

Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258X series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258XRepetitive peak off-state .

  BT258X-600R   BT258X-600R



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Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258X series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths ≤ 90 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. October 2002 1 Rev 2.000 Philips Semiconductors Product specification Thyristors logic level ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. - BT258X series TYP. - MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.0 6.9 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(m.


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