CXT5551

NPN Silicon Epitaxial Planar Transistor FEATURES z Switching and amplification in high voltage. z Low current(max. 600mA) z High voltage (max. 180V) Pb Lead-free Production specification CXT5551 APPLICATIONS z High voltage amplifier application. ORDERING INFORMATION Type No. Marking CXT5551 1G6 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance 180 160 6 600 0.625 250 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA W ℃/W ℃ E059 Rev.A www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V Collector-emitter...