SP8610

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8610 Ver 1.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 9.0 @ VGS=4.5V 9.5 @ VGS=4.0V 13A 10.0 @ VGS=3.7V 10.5 @ VGS=3.1V 11.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 PIN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 20 ±10 13 10.4 58 1.32 0.84 -55 to 150 95 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 Jun,16,2016 www.samhop.com.tw SP8610 Ver 1.1 ELECTRICAL CHARACTERISTICS (TA=25°C un...